1/4 2011.11 - rev.a schottky barrier diode RB501VM-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1)small mold type. (umd2) 2)high reliability ? construction silicon epitaxial planer ? structure ? absolute maximum ratings (ta=25 c) symbol unit v rm v v r v io ma i fsm a tj c tstg c ? electrical characteristics (ta=25 c) symbol min. typ. max. unit conditions v f 1 - - 0.55 v i f =100ma v f 2 - - 0.34 v i f =10ma i r - - 30 a v r =10v ct - 6.0 - pf v r =10v , f=1mhz reverse current capacitance between terminals storage temperature - 40 to + 125 parameter forward voltage average rectified forward current 100 forward current surge peak (60hz ? 1cyc) 1 junction temperature 125 reverse voltage (dc) 40 ? taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 45 umd2 2.1 0.8min. 0.9min. 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1 rohm : umd2 jeita : sc - 90/a jedec : sod - 323 dot (year week factory) 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1 data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB501VM-40 2/4 2011.11 - rev.a 1 10 100 0 100 200 300 400 500 600 forward voltage v f (mv) v f -i f characteristics forward current:i f (ma) ta= ? 25 c ta=125 c ta=75 c ta=25 c 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse current:i r ( a) reverse voltage v r (v) v r -i r characteristics ta= ? 25 c ta=125 c ta=25 c ta=75 c 1 10 100 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 420 430 440 450 460 470 v f dispersion map forward voltage:v f (mv) ave:438.8mv ta=25 c i f =100ma n=30pcs 0 5 10 15 20 25 30 reverse current:i r ( a) i r dispersion map ta=25 c v r =10v n=10pcs ave:2.57 a 0 2 4 6 8 10 12 14 16 18 20 ave:5.81pf ta=25 c f=1mhz v r =10v n=10pcs capacitance between terminals:ct(pf) ct dispersion map www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB501VM-40 3/4 2011.11 - rev.a 0 5 10 15 20 ave:5.50a 8.3ms i fsm 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 trr dispersion map reverse recovery time:trr(ns) ave:6.20ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs 0 5 10 15 0.1 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0 5 10 15 0.1 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j -c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) mounted on epoxy board 0 0.02 0.04 0.06 0.08 0.1 0 0.1 0.2 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( 180) www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB501VM-40 4/4 2011.11 - rev.a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0 10 20 30 reverse power dissipation:p r (w) reverse voltage:v r (v) v r -p r characteristics sin( 180) dc d=1/2 0 0.05 0.1 0.15 0.2 0.25 0.3 0 25 50 75 100 125 ambient temperature:ta( c) derating curve (io - ta) average rectified forward current:io(a) sin( 180) dc d=1/2 t tj=125 c d=t/t t v r io v r =20v 0a 0v 0 0.05 0.1 0.15 0.2 0.25 0.3 0 25 50 75 100 125 average rectified forward current:io(a) case temperature:tc( c) derating curve (io -tc) t tj=125 c d=t/t t v r io v r =20v 0a 0v sin( 180) dc d=1/2 www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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